Electronics Engineering

- Limits and prospects of ULSI technologies. - Fabrication steps of BJT and MOSFET devices. - Monocrystalline silicon: chemical-physical properties of silicon, bulk single-crystal growth using the Czochralski method, defects. - Epitaxial growth techniques: vapor-phase epitaxy (VPE, MOVPE), molecular beam epitaxy (MBE). - Thermal oxidation of silicon: structure and properties of silicon oxide; kinetic model; thermal oxidation equipment. - Doping techniques for semiconductor materials: mechanisms of dopant diffusion, thermal diffusion, ion implantation. - Thin-film deposition: chemical vapor deposition (CVD) and physical vapor deposition (PVD). - Lithographic techniques: mask preparation; optical, X-ray, and electron beam lithography; resists. - Wet and dry etching: anisotropy and selectivity of etching; plasma etching, sputter etching, and reactive ion etching (RIE). - Conductors: metals for interconnections; electromigration, metallization levels, and via-holes. - The technology laboratory, basics of vacuum technologies.

A basic knowledge of electronics fundamentals is required. Familiarity with basic electronic devices (diodes, transistors) is helpful but not essential.

Silicon Processing for the VLSI Era: S. Wolf, R.N. Tauber, Vol 1 Process Technology, Lattice press Supplementary material (lecture slides, articles)

Attendance of the course, including the laboratory sessions, is strongly recommended. The exam modality for non-attending students includes an additional oral part aimed at verifying whether the fundamental concepts covered in the program have been acquired.

The exam consists of the presentation of a report assigned to each student at the end of the lecture cycle. The work is presented both as a written document and as an oral presentation with slides. In the first part of the work, the student describes the fabrication process of a specific electronic device/system, with particular attention to the physical structure of the device, the materials used, and the sequence of technological steps involved in its fabrication. In the second part, one of the micro-/nano-electronic technologies used in the process described in the first part must be discussed in detail, including a theoretical analysis of the models describing the process dynamics, a description of the equipment used and the process control parameters, and an overview of the material characterization techniques related to the selected technology. The presentation lasts approximately one hour, with possible questions aimed at verifying the student’s understanding of the knowledge and concepts discussed during the course.

The course includes a classroom lecture component and a substantial laboratory component (more than half of the course), involving a series of hands-on experiences aimed at completing the entire fabrication process of a thin-film device array.

- Limits and prospects of ULSI technologies. - Fabrication steps of BJT and MOSFET devices. - Monocrystalline silicon: chemical-physical properties of silicon, bulk single-crystal growth using the Czochralski method, defects. - Epitaxial growth techniques: vapor-phase epitaxy (VPE, MOVPE), molecular beam epitaxy (MBE). - Thermal oxidation of silicon: structure and properties of silicon oxide; kinetic model; thermal oxidation equipment. - Doping techniques for semiconductor materials: mechanisms of dopant diffusion, thermal diffusion, ion implantation. - Thin-film deposition: chemical vapor deposition (CVD) and physical vapor deposition (PVD). - Lithographic techniques: mask preparation; optical, X-ray, and electron beam lithography; resists. - Wet and dry etching: anisotropy and selectivity of etching; plasma etching, sputter etching, and reactive ion etching (RIE). - Conductors: metals for interconnections; electromigration, metallization levels, and via-holes. - The technology laboratory, basics of vacuum technologies.

A basic knowledge of electronics fundamentals is required. Familiarity with basic electronic devices (diodes, transistors) is helpful but not essential.

Silicon Processing for the VLSI Era: S. Wolf, R.N. Tauber, Vol 1 Process Technology, Lattice press Supplementary material (lecture slides, articles)

Attendance of the course, including the laboratory sessions, is strongly recommended. The exam modality for non-attending students includes an additional oral part aimed at verifying whether the fundamental concepts covered in the program have been acquired.

The exam consists of the presentation of a report assigned to each student at the end of the lecture cycle. The work is presented both as a written document and as an oral presentation with slides. In the first part of the work, the student describes the fabrication process of a specific electronic device/system, with particular attention to the physical structure of the device, the materials used, and the sequence of technological steps involved in its fabrication. In the second part, one of the micro-/nano-electronic technologies used in the process described in the first part must be discussed in detail, including a theoretical analysis of the models describing the process dynamics, a description of the equipment used and the process control parameters, and an overview of the material characterization techniques related to the selected technology. The presentation lasts approximately one hour, with possible questions aimed at verifying the student’s understanding of the knowledge and concepts discussed during the course.

The course includes a classroom lecture component and a substantial laboratory component (more than half of the course), involving a series of hands-on experiences aimed at completing the entire fabrication process of a thin-film device array.